Br d965 транзистор аналог
Биполярный транзистор D965 — описание производителя. Основные параметры. Даташиты.
Наименование производителя: D965
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 42 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 22 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 340
Корпус транзистора: TO92
D965 Datasheet (PDF)
1.1. 2sd965-q.pdf Size:176K _update
Product specification 2SD965-Q Unit:mm SOT-89 1.50 ±0.1 4.50±0.1 1.80±0.1 ■ Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44±0.1 0.48±0.1 0.53±0.1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
1.2. 2sd965k.pdf Size:124K _update
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V C
GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 22V amplifier and switch. Collector Current : 5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
1.5. d965ss.pdf Size:189K _upd
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
1.6. d965-t.pdf Size:229K _upd
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R
1.7. d965v.pdf Size:110K _upd
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base
1.8. d965-r.pdf Size:229K _upd
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R
1.9. 2sd965.pdf Size:39K _panasonic
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Coll
1.10. 2sd965 e.pdf Size:43K _panasonic
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Coll
1.11. 2sd965.pdf Size:18K _utc
1.12. d965.pdf Size:272K _secos
1.13. 2sd965a.pdf Size:101K _secos
1.14. cd965.pdf Size:223K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package B C E For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 7 V IC Collector Current 5 A
1.15. 2sd965.pdf Size:335K _htsemi
2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC C
1.16. 2sd965a.pdf Size:555K _htsemi
1.17. d965.pdf Size:163K _lge
D965(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 6 V IC Collector Cu
1.18. 2sd965a.pdf Size:206K _lge
2SD965A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 Audio amplifier MIN 0.53 0.40 0.48 0.44 Flash unit of camera 2x) 0.13 B 0.35 0.37 1.5 Switching circuit 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value
1.19. 2sd965.pdf Size:828K _wietron
1.20. hsd965.pdf Size:47K _hsmc
1.21. btd965n3.pdf Size:246K _cystek
Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B：Base C：Collector
1.22. btd965la3.pdf Size:140K _cystek
Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp. Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features • High current capability • Low collector-to-emitter saturation voltage • High allowable power dissipation • Pb-free package Applications • Relay drivers, lamp drivers, motor drivers, strobes Sy
1.23. btd965a3.pdf Size:236K _cystek
Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp. Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 5A BTD965A3 RCESAT(typ) 0.12Ω Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package
1.24. 2sd965t.pdf Size:1165K _blue-rocket-elect
2SD965T(BR3DG965T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降低,高性能。 Low VCE(sat),high performance. 用途 / Applications 用于音频输出放大。 Audio frequency output amplifier. 内部等效电路 / Equivalent Circuit 引脚�
1.25. hd965.pdf Size:260K _shantou-huashan
150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯⋯⋯⋯⋯⋯⋯�
1.26. 2sd965.pdf Size:1219K _kexin
SMD Type Transistors NPN Transistors 2SD965 1.70 0.1 ■ Features ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation and Current ● Mini Power Type Package 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector — Base Voltage VCBO 40 Collector — Emitter Voltage VCEO 20 V
1.27. 2sd965a.pdf Size:321K _kexin
SMD Type Transistors NPN Transistors 2SD965A 1.70 0.1 ■ Features ● Audio amplifier ● Flash unit of camera ● Switching circuit 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector — Base Voltage VCBO 40 Collector — Emitter Voltage VCEO 30 V Emitter — Base Voltage VEBO 7 Collector Current — C
1.28. 2sd965a.pdf Size:250K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter V
Биполярный транзистор D965 — описание производителя. Основные параметры. Даташиты.
Наименование производителя: D965
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 42 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 22 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 340
Корпус транзистора: TO92
D965 Datasheet (PDF)
1.1. 2sd965-q.pdf Size:176K _update
Product specification 2SD965-Q Unit:mm SOT-89 1.50 ±0.1 4.50±0.1 1.80±0.1 ■ Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44±0.1 0.48±0.1 0.53±0.1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
1.2. 2sd965k.pdf Size:124K _update
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V C
GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 22V amplifier and switch. Collector Current : 5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
1.5. d965ss.pdf Size:189K _upd
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
1.6. d965-t.pdf Size:229K _upd
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R
1.7. d965v.pdf Size:110K _upd
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base
1.8. d965-r.pdf Size:229K _upd
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R
1.9. 2sd965.pdf Size:39K _panasonic
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Coll
1.10. 2sd965 e.pdf Size:43K _panasonic
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Coll
1.11. 2sd965.pdf Size:18K _utc
1.12. d965.pdf Size:272K _secos
1.13. 2sd965a.pdf Size:101K _secos
1.14. cd965.pdf Size:223K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package B C E For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 7 V IC Collector Current 5 A
1.15. 2sd965.pdf Size:335K _htsemi
2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC C
1.16. 2sd965a.pdf Size:555K _htsemi
1.17. d965.pdf Size:163K _lge
D965(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 6 V IC Collector Cu
1.18. 2sd965a.pdf Size:206K _lge
2SD965A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 Audio amplifier MIN 0.53 0.40 0.48 0.44 Flash unit of camera 2x) 0.13 B 0.35 0.37 1.5 Switching circuit 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value
1.19. 2sd965.pdf Size:828K _wietron
1.20. hsd965.pdf Size:47K _hsmc
1.21. btd965n3.pdf Size:246K _cystek
Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B：Base C：Collector
1.22. btd965la3.pdf Size:140K _cystek
Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp. Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features • High current capability • Low collector-to-emitter saturation voltage • High allowable power dissipation • Pb-free package Applications • Relay drivers, lamp drivers, motor drivers, strobes Sy
1.23. btd965a3.pdf Size:236K _cystek
Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp. Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 5A BTD965A3 RCESAT(typ) 0.12Ω Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package
1.24. 2sd965t.pdf Size:1165K _blue-rocket-elect
2SD965T(BR3DG965T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降低,高性能。 Low VCE(sat),high performance. 用途 / Applications 用于音频输出放大。 Audio frequency output amplifier. 内部等效电路 / Equivalent Circuit 引脚�
1.25. hd965.pdf Size:260K _shantou-huashan
150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯⋯⋯⋯⋯⋯⋯�
1.26. 2sd965.pdf Size:1219K _kexin
SMD Type Transistors NPN Transistors 2SD965 1.70 0.1 ■ Features ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation and Current ● Mini Power Type Package 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector — Base Voltage VCBO 40 Collector — Emitter Voltage VCEO 20 V
1.27. 2sd965a.pdf Size:321K _kexin
SMD Type Transistors NPN Transistors 2SD965A 1.70 0.1 ■ Features ● Audio amplifier ● Flash unit of camera ● Switching circuit 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector — Base Voltage VCBO 40 Collector — Emitter Voltage VCEO 30 V Emitter — Base Voltage VEBO 7 Collector Current — C
1.28. 2sd965a.pdf Size:250K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter V
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